The effect of electron bombardment on optical properties of n-type silicon

• Published in: Applied surface science 2004-10, Vol.237 (1-4), p.161-164
• Main Authors: Sari, Amir H., Osman, F., Ghoranneviss, M., Hora, H., Höpfl, R., Hantehzadeh, M.R.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electron bombardment; Electrons and positron radiation effects; Exact sciences and technology; n-type silicon; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physical radiation effects, radiation damage; Physics; Structure of solids and liquids; crystallography
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.06.119

The production of p–n junctions and polar transistors in silicon to small scale lengths may be possible by plasma and electron beam techniques using the sub-threshold change of n-silicon into p-silicon by electron beam and its reversion at higher electron beam intensities. As a first step, in this study, experimental observation of the effect of electron beam on optical properties of n-type silicon samples is described. Electron bombardment with the energy of 20keV and different doses in the range of 1016 to 1019electron/cm2 has been carried out. Use was made of a new design of an electron beam gun as described in details, using a helium obstructed discharge of a concave cold cathode. Optical properties of irradiated samples were determined by a UV–vis–NIR spectrophotometer. The results show an increase in the longer wave length than the fundamental band gap absorption with increasing electron dose.