Interfacial Engineering of In2Se3/h-BN/CsPb(Br/I)3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System

• Published in: ACS nano 2023-07, Vol.17 (14), p.13760-13768
• Main Authors: Niu, Yingying, Zhou, Xin, Gao, Wei, Fu, Maixia, Duan, Yule, Yao, Jiandong, Wang, Bing, Yang, Mengmeng, Zheng, Zhaoqiang, Li, Jingbo
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.3c03319

Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb­(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb­(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb­(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.