Inductive write heads for greater than 60 Gb/in(2) demonstration

Sputter deposited FeRhN films with a B(s) value of more than 20 kG were used as high moment flux enhancement layer in the write element in order to achieve a recording density of 63.2 Gb/in(2). This layer was disposed between write gap and upper portion of the top pole, which was made of Ni(45)Fe(55...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2001-07, Vol.37 (4), p.1719-1722
Main Authors: Chen, Y, Tong, H C, Shi, X, Wang, J, Liu, F, Stoev, K, Jensen, W, Rathi, D, Martinez, L, Pansoy, H, Dong, Z W, Yan, X, Chien, C
Format: Article
Language:English
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Summary:Sputter deposited FeRhN films with a B(s) value of more than 20 kG were used as high moment flux enhancement layer in the write element in order to achieve a recording density of 63.2 Gb/in(2). This layer was disposed between write gap and upper portion of the top pole, which was made of Ni(45)Fe(55) with a B(s) of 16 kG. A 36 dB overwrite and nonlinear transition shift of less then -20 dB were obtained at this recording density. A finite element model was used to calculate the longitudinal field and field gradient at the medium location. The results suggested significant increases of both by incorporating the flux enhancement layer
ISSN:0018-9464
DOI:10.1109/20.950948