An above IC MEMS RF switch

Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechanical systems (MEMS) ohmic switch is reported here....

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2003-12, Vol.38 (12), p.2318-2324
Main Authors: Saias, D., Robert, P., Boret, S., Billard, C., Bouche, G., Belot, D., Ancey, P.
Format: Article
Language:English
Subjects:
BiCMOS integrated circuits
Circuits
Design engineering
Driver circuits
Integrated circuits
Microelectromechanical devices
Microelectromechanical systems
Micromechanical devices
Monolithic integrated circuits
Radio frequencies
Radio frequency
Radiofrequency integrated circuits
Switches
Switching circuits
Terminals
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Summary:Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechanical systems (MEMS) ohmic switch is reported here. Applications at 2 GHz have been targeted. The MEMS device was processed on top of a 0.25-/spl mu/m standard BiCMOS wafer including the switch IC driver. An extensive RF characterization has been made. The switch exhibits at 2 GHz a 0.18-dB insertion loss and a 57-dB isolation level. This realization opens the way to further designs of reconfigurable architectures for multiband and multistandard mobile terminals.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2003.819170