The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts

• Published in: Synthetic metals 2004-04, Vol.142 (1), p.177-180
• Main Authors: Çakar, M., Temirci, C., Türüt, A.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Metal–interfacial layer–semiconductor contacts; Organic–inorganic semiconductor contact; Physics; Pyronine-B; Schottky barrier; Surface double layers, schottky barriers, and work functions
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/j.synthmet.2003.08.009

The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether or not a nonpolymeric organic compound as contact to an inorganic semiconductor such as Si can provide the continuous control of the barrier height (BH). The barrier height Φ bp values of 0.51, 0.674, 0.75 and 0.79 eV for the Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have obtained from the forward current–voltage ( I– V) characteristics. It has been seen that the values of Φ bp are significantly larger than those of conventional Schottky diodes.