Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

The onset of impact-ionization-induced instabilities limits the operating range of Si-bipolar transistors, especially in power stages. Therefore, analytical relations which characterize the onset of instabilities are derived for different driving conditions (mainly V/sub BE/=const. and I/sub E/=cons...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-04, Vol.48 (4), p.774-783
Main Authors: Rickelt, M., Rein, H.-M., Rose, E.
Format: Article
Language:English
Subjects:
Driving conditions
Electric potential
Impact ionization
Instability
Mathematical analysis
Semiconductor devices
Stability
Transistors
Voltage
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Summary:The onset of impact-ionization-induced instabilities limits the operating range of Si-bipolar transistors, especially in power stages. Therefore, analytical relations which characterize the onset of instabilities are derived for different driving conditions (mainly V/sub BE/=const. and I/sub E/=const.) and arbitrary transistor geometries. They allow the designer and technologist to calculate the maximum usable dc output voltage in dependence on transistor dimensions and technological parameters. As a consequence, the voltage range above BV/sub CE0/ can now be more intensively and reliably used and thus the performance potential of a given technology can be better exploited. However, the reduction of the maximum tolerable output voltage with increasing emitter (or collector) current must be carefully considered. The presented theory and analytical results are verified by three-dimensional (3-D) transistor simulations and by measurements.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.915725