An improved inverted delta -doped GaAs/InGaAs pseudomorphicheterostructure grown by MOCVD

This letter demonstrates a novel GaAs/In(0.25)Ga(0.75 )As/GaAs pseudomorphic heterostructure with delta-doping on the buffer prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The proposed device with a 1.5x80 mum(2) gate reveals an extrinsic transconductance as high as 250...

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Bibliographic Details
Published in:IEEE electron device letters 1994-09, Vol.15 (9), p.330-332
Main Authors: Wu, Chang-Luen, Hsu, Wei-Chou, Shieh, Hir-Ming, Tsai, Ming-Shang
Format: Article
Language:English
Online Access:Get full text
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Summary:This letter demonstrates a novel GaAs/In(0.25)Ga(0.75 )As/GaAs pseudomorphic heterostructure with delta-doping on the buffer prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The proposed device with a 1.5x80 mum(2) gate reveals an extrinsic transconductance as high as 250 (305) mS/mm and a saturation current density as high as 790 (890) mA/mm at 300 (77) K. Significantly improvements on forward gate voltage swing (up to 3 V) and on reverse leakage current (smaller than 10 muA/mm at -6.5 V) are demonstrated due to inverted parallel conduction (IPC) effect. We also carried out secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed device
ISSN:0741-3106
DOI:10.1109/55.311124