Thermal decomposition of dimethylaluminum isopropoxide on Si(1 0 0)

• Published in: Applied surface science 2004-01, Vol.222 (1-4), p.234-242
• Main Authors: Lee, Sung Yong, Luo, Bing, Sun, Yangming, White, J.M, Kim, Yunsoo
• Format: Article
• Language: English
• Subjects: Adsorption and desorption kinetics; evaporation and condensation; Aluminum oxide; Chemistry; Condensed matter: structure, mechanical and thermal properties; Decomposition reactions (pyrolysis, dissociation, and group ejection); Dimethylaluminum isopropoxide; Exact sciences and technology; General and physical chemistry; Isothermal reactions; Physics; Si substrate; Solid-fluid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory of reactions, general kinetics; Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry; TPD
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2003.08.016

The thermal decomposition of dimethylaluminum isopropoxide dimer, [(CH3)2Al(OiC3H7)]2, on Si(100) is investigated by line-of-sight temperature programmed desorption (LOS-TPD), line-of-sight isothermal reaction spectroscopy (LOS-IRS), and Auger electron spectroscopy (AES). [(CH3)2Al(OiC3H7)]2 does not decompose upon adsorption on Si(100) held at 100K or during subsequent LOS-TPD. AES indicates that film growth starts when the precursor is dosed with the substrate at ∼650K. LOS-IRS shows that the monomer, [(CH3)2Al(OiC3H7)]2, is an intermediate in the process of the dimer decomposition to aluminum-containing films, and that further decompositions occur via breaking the CAl and OC bonds.