In situ computerized optical reflectivity measurement system for ion implantation

A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The...

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Published in:IEEE transactions on nuclear science 1993-02, Vol.40 (1), p.2-10
Main Authors: Swart, P.L., Lacquet, B.M., Grobler, M.F., Aharoni, H.
Format: Article
Language:English
Subjects:
665300 - Interactions Between Beams & Condensed Matter- (1992-)
ACCURACY
Applied sciences
ARGON IONS
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROL
CRYSTAL STRUCTURE
Crystalline materials
CRYSTALS
DATA ACQUISITION
DATA PROCESSING
Electronics
Exact sciences and technology
History
Implants
ION IMPLANTATION
IONS
MEASURING INSTRUMENTS
MEASURING METHODS
Microelectronic fabrication (materials and surfaces technology)
NITROGEN IONS
Optical computing
Optical materials
OPTICAL PROPERTIES
Optical signal processing
Particle beam optics
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PROCESS CONTROL
PROCESSING
REFLECTIVITY
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SUBSTRATES
SURFACE PROPERTIES
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container_title IEEE transactions on nuclear science
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creator Swart, P.L.
Lacquet, B.M.
Grobler, M.F.
Aharoni, H.
description A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system consists of an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g. dose). Examples regarding the implantation of /sup 31/P/sup +/, /sup 40/Ar/sup +/, and /sup 14/N/sup +/ are presented. Additional suggestions for further system development and applications are made. Among the advantages of in situ measurements are the time-effort-expense. savings, a higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.< >
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fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_28445256</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>199481</ieee_id><sourcerecordid>28445256</sourcerecordid><originalsourceid>FETCH-LOGICAL-c208t-d267ef65e6814743fdb9abcdbd9b9b054e63809fad2221a8af4a725dfc1fbe7f3</originalsourceid><addsrcrecordid>eNpFkE1L7jAQRoMo-PqxcOsqiAh3UU3SpE2WInoVBBF0HdJ0gpG2qUkqvP56I5V7V8MDZw4zD0InlFxSStQVqy-pUlzSHbShQsiKilbuog0hVFaKK7WPDlJ6L5ELIjbo-WHCyecF2zDOS4bov6DHYc7emgFHcAPY7D993uIRTFoijDBlnLYpw4hdiNiHCftxHsyUTS7hCO05MyQ4_p2H6PXu9uXmvnp8-vtwc_1YWUZkrnrWtOAaAY2kvOW16ztlOtt3vepURwSHppZEOdMzxqiRxnHTMtE7S10HrasP0dnqDSl7nazPYN9smKZysG4E5VKxAl2s0BzDxwIp69EnC0O5FsKSNJOcCyaaAv5ZQRtDSuVvPUc_mrjVlOifZjWr9dpsYc9_pSaVllw0k_Xp30KtiBRKFOx0xTwA_Netjm__6oH6</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28445256</pqid></control><display><type>article</type><title>In situ computerized optical reflectivity measurement system for ion implantation</title><source>IEEE Xplore (Online service)</source><creator>Swart, P.L. ; Lacquet, B.M. ; Grobler, M.F. ; Aharoni, H.</creator><creatorcontrib>Swart, P.L. ; Lacquet, B.M. ; Grobler, M.F. ; Aharoni, H.</creatorcontrib><description>A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system consists of an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g. dose). Examples regarding the implantation of /sup 31/P/sup +/, /sup 40/Ar/sup +/, and /sup 14/N/sup +/ are presented. Additional suggestions for further system development and applications are made. Among the advantages of in situ measurements are the time-effort-expense. savings, a higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.&lt; &gt;</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.199481</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>665300 - Interactions Between Beams &amp; Condensed Matter- (1992-) ; ACCURACY ; Applied sciences ; ARGON IONS ; CHARGED PARTICLES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CONTROL ; CRYSTAL STRUCTURE ; Crystalline materials ; CRYSTALS ; DATA ACQUISITION ; DATA PROCESSING ; Electronics ; Exact sciences and technology ; History ; Implants ; ION IMPLANTATION ; IONS ; MEASURING INSTRUMENTS ; MEASURING METHODS ; Microelectronic fabrication (materials and surfaces technology) ; NITROGEN IONS ; Optical computing ; Optical materials ; OPTICAL PROPERTIES ; Optical signal processing ; Particle beam optics ; PHOSPHORUS IONS ; PHYSICAL PROPERTIES ; PROCESS CONTROL ; PROCESSING ; REFLECTIVITY ; SEMICONDUCTOR DEVICES ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SUBSTRATES ; SURFACE PROPERTIES</subject><ispartof>IEEE transactions on nuclear science, 1993-02, Vol.40 (1), p.2-10</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c208t-d267ef65e6814743fdb9abcdbd9b9b054e63809fad2221a8af4a725dfc1fbe7f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/199481$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3908595$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6514892$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Swart, P.L.</creatorcontrib><creatorcontrib>Lacquet, B.M.</creatorcontrib><creatorcontrib>Grobler, M.F.</creatorcontrib><creatorcontrib>Aharoni, H.</creatorcontrib><title>In situ computerized optical reflectivity measurement system for ion implantation</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system consists of an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g. dose). Examples regarding the implantation of /sup 31/P/sup +/, /sup 40/Ar/sup +/, and /sup 14/N/sup +/ are presented. Additional suggestions for further system development and applications are made. Among the advantages of in situ measurements are the time-effort-expense. savings, a higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.&lt; &gt;</description><subject>665300 - Interactions Between Beams &amp; Condensed Matter- (1992-)</subject><subject>ACCURACY</subject><subject>Applied sciences</subject><subject>ARGON IONS</subject><subject>CHARGED PARTICLES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CONTROL</subject><subject>CRYSTAL STRUCTURE</subject><subject>Crystalline materials</subject><subject>CRYSTALS</subject><subject>DATA ACQUISITION</subject><subject>DATA PROCESSING</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>History</subject><subject>Implants</subject><subject>ION IMPLANTATION</subject><subject>IONS</subject><subject>MEASURING INSTRUMENTS</subject><subject>MEASURING METHODS</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>NITROGEN IONS</subject><subject>Optical computing</subject><subject>Optical materials</subject><subject>OPTICAL PROPERTIES</subject><subject>Optical signal processing</subject><subject>Particle beam optics</subject><subject>PHOSPHORUS IONS</subject><subject>PHYSICAL PROPERTIES</subject><subject>PROCESS CONTROL</subject><subject>PROCESSING</subject><subject>REFLECTIVITY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SUBSTRATES</subject><subject>SURFACE PROPERTIES</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNpFkE1L7jAQRoMo-PqxcOsqiAh3UU3SpE2WInoVBBF0HdJ0gpG2qUkqvP56I5V7V8MDZw4zD0InlFxSStQVqy-pUlzSHbShQsiKilbuog0hVFaKK7WPDlJ6L5ELIjbo-WHCyecF2zDOS4bov6DHYc7emgFHcAPY7D993uIRTFoijDBlnLYpw4hdiNiHCftxHsyUTS7hCO05MyQ4_p2H6PXu9uXmvnp8-vtwc_1YWUZkrnrWtOAaAY2kvOW16ztlOtt3vepURwSHppZEOdMzxqiRxnHTMtE7S10HrasP0dnqDSl7nazPYN9smKZysG4E5VKxAl2s0BzDxwIp69EnC0O5FsKSNJOcCyaaAv5ZQRtDSuVvPUc_mrjVlOifZjWr9dpsYc9_pSaVllw0k_Xp30KtiBRKFOx0xTwA_Netjm__6oH6</recordid><startdate>19930201</startdate><enddate>19930201</enddate><creator>Swart, P.L.</creator><creator>Lacquet, B.M.</creator><creator>Grobler, M.F.</creator><creator>Aharoni, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19930201</creationdate><title>In situ computerized optical reflectivity measurement system for ion implantation</title><author>Swart, P.L. ; Lacquet, B.M. ; Grobler, M.F. ; Aharoni, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c208t-d267ef65e6814743fdb9abcdbd9b9b054e63809fad2221a8af4a725dfc1fbe7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>665300 - Interactions Between Beams &amp; Condensed Matter- (1992-)</topic><topic>ACCURACY</topic><topic>Applied sciences</topic><topic>ARGON IONS</topic><topic>CHARGED PARTICLES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CONTROL</topic><topic>CRYSTAL STRUCTURE</topic><topic>Crystalline materials</topic><topic>CRYSTALS</topic><topic>DATA ACQUISITION</topic><topic>DATA PROCESSING</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>History</topic><topic>Implants</topic><topic>ION IMPLANTATION</topic><topic>IONS</topic><topic>MEASURING INSTRUMENTS</topic><topic>MEASURING METHODS</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>NITROGEN IONS</topic><topic>Optical computing</topic><topic>Optical materials</topic><topic>OPTICAL PROPERTIES</topic><topic>Optical signal processing</topic><topic>Particle beam optics</topic><topic>PHOSPHORUS IONS</topic><topic>PHYSICAL PROPERTIES</topic><topic>PROCESS CONTROL</topic><topic>PROCESSING</topic><topic>REFLECTIVITY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SUBSTRATES</topic><topic>SURFACE PROPERTIES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Swart, P.L.</creatorcontrib><creatorcontrib>Lacquet, B.M.</creatorcontrib><creatorcontrib>Grobler, M.F.</creatorcontrib><creatorcontrib>Aharoni, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Swart, P.L.</au><au>Lacquet, B.M.</au><au>Grobler, M.F.</au><au>Aharoni, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ computerized optical reflectivity measurement system for ion implantation</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1993-02-01</date><risdate>1993</risdate><volume>40</volume><issue>1</issue><spage>2</spage><epage>10</epage><pages>2-10</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system consists of an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g. dose). Examples regarding the implantation of /sup 31/P/sup +/, /sup 40/Ar/sup +/, and /sup 14/N/sup +/ are presented. Additional suggestions for further system development and applications are made. Among the advantages of in situ measurements are the time-effort-expense. savings, a higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.&lt; &gt;</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/23.199481</doi><tpages>9</tpages></addata></record>
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language eng
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source IEEE Xplore (Online service)
subjects 665300 - Interactions Between Beams & Condensed Matter- (1992-)
ACCURACY
Applied sciences
ARGON IONS
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROL
CRYSTAL STRUCTURE
Crystalline materials
CRYSTALS
DATA ACQUISITION
DATA PROCESSING
Electronics
Exact sciences and technology
History
Implants
ION IMPLANTATION
IONS
MEASURING INSTRUMENTS
MEASURING METHODS
Microelectronic fabrication (materials and surfaces technology)
NITROGEN IONS
Optical computing
Optical materials
OPTICAL PROPERTIES
Optical signal processing
Particle beam optics
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PROCESS CONTROL
PROCESSING
REFLECTIVITY
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SUBSTRATES
SURFACE PROPERTIES
title In situ computerized optical reflectivity measurement system for ion implantation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T00%3A57%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In%20situ%20computerized%20optical%20reflectivity%20measurement%20system%20for%20ion%20implantation&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Swart,%20P.L.&rft.date=1993-02-01&rft.volume=40&rft.issue=1&rft.spage=2&rft.epage=10&rft.pages=2-10&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/23.199481&rft_dat=%3Cproquest_osti_%3E28445256%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c208t-d267ef65e6814743fdb9abcdbd9b9b054e63809fad2221a8af4a725dfc1fbe7f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28445256&rft_id=info:pmid/&rft_ieee_id=199481&rfr_iscdi=true