Note on the interpretation of C-V data in semiconductor junctions

This correspondence presents a proof that when Schottky barrier approximations are applicable to a p-n junction, a straight line on the graph of log C versus \log(V+V_{B}) requires a power law dependence of doping on depletion width. This dependence is x^{(1/n-2)} .

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Bibliographic Details
Published in:IEEE transactions on electron devices 1970-05, Vol.17 (5), p.436-436
Main Author: Coerver, L.E.
Format: Article
Language:English
Subjects:
Capacitance
Doping profiles
Permittivity
Schottky barriers
Schottky diodes
Semiconductor device measurement
Voltage
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Description
Summary:This correspondence presents a proof that when Schottky barrier approximations are applicable to a p-n junction, a straight line on the graph of log C versus \log(V+V_{B}) requires a power law dependence of doping on depletion width. This dependence is x^{(1/n-2)} .
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1970.17002