Numerical modeling of silicon magnetic field sensors: Magnetoconcentration effects in split-metal-contact devices

The two-dimensional distributions of the electric potential, the electron concentration and the hole concentration in a silicon slab exposed to a magnetic field have been computed numerically. Generalizing the well-known Scharfetter-Gummel scheme to the case of two dimensions and nonzero magnetic fi...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1984-09, Vol.20 (5), p.975-977
Main Authors: Schmidt-Weinmar, H., Andor, L., Baltes, H., Nathan, A.
Format: Article
Language:English
Subjects:
Charge carrier processes
Distributed computing
Electric potential
Finite difference methods
Magnetic devices
Magnetic fields
Magnetic sensors
Numerical models
Silicon
Slabs
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Summary:The two-dimensional distributions of the electric potential, the electron concentration and the hole concentration in a silicon slab exposed to a magnetic field have been computed numerically. Generalizing the well-known Scharfetter-Gummel scheme to the case of two dimensions and nonzero magnetic field, we have employed a finite-difference technique. In case of Hall plates, where space charge is negligible, our results are in support of previous results obtained by analytical models or by conformal-mapping technique. In intrinsic or closely intrinsic silicon, our results show both magnetoconcentration and space-charge effects; these can be exploited in the design of split-metal-contact magnetic field sensors.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1984.1063182