InP metal-insulator-semiconductor field-effect transistors utilizing an amorphous phosphorus gate insulator

We have fabricated metal-insulator-semiconductor field-effect transistors (MISFET's) on InP using plasma-deposited amorphous phosphorus as the gate insulator. This material was selected because it provides low interface state densities (∼10 12 cm -2 . eV -1 ) at the phosphorus-InP interface. Th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-04, Vol.34 (4), p.931-932
Main Authors: Serreze, H.B., Schachter, R., Olego, D.J., Viscogliosi, M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We have fabricated metal-insulator-semiconductor field-effect transistors (MISFET's) on InP using plasma-deposited amorphous phosphorus as the gate insulator. This material was selected because it provides low interface state densities (∼10 12 cm -2 . eV -1 ) at the phosphorus-InP interface. The resulting 10-µm channel length enhancement-mode transistors have a transconductance of 10 mS/mm, channel mobility of 1800 cm 2 /V . s, and threshold voltage of +0.6 V. Drain current drift, which has been a problem common to all reported InP MISFET's, is observed. Possible causes for its occurrence are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23018