An investigation of the sensitivity of lateral magnetotransistors

An investigation of the magnetic-field sensitivity of lateral, double base contact p-n-p magnetotransistor is reported. At very low collector current levels the sensitivity is an exponential function of the base current and rises up to 30 A/A.T at 1 T. At larger collector currents sensitivity decrea...

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Bibliographic Details
Published in:IEEE electron device letters 1983-03, Vol.4 (3), p.51-53
Main Authors: Popovic, R.S., Baltes, H.P.
Format: Article
Language:English
Subjects:
Bipolar transistors
Contacts
Design optimization
Lorentz covariance
Magnetic devices
Magnetic field measurement
Magnetic fields
Magnetic sensors
Research and development
Voltage
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Summary:An investigation of the magnetic-field sensitivity of lateral, double base contact p-n-p magnetotransistor is reported. At very low collector current levels the sensitivity is an exponential function of the base current and rises up to 30 A/A.T at 1 T. At larger collector currents sensitivity decreases drastically and approaches the usual value of less then 1.5 A/A.T. This behaviour is explained in terms of a Hall-type voltage, which is generated in the base region and causes a magnetic-field-modulated injection of carriers.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1983.25644