Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

Authors characterized the temperature dependence of band-edge transitions of three (Zn0.38Cd0.62)1-xBexSe II-VI films with different Be concentrations x by using contactless electroreflectance (CER) and piezoreflectance (PzR) in the temperature range of 15 to 450 K. By a careful comparison of the re...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004, Vol.43 (2), p.459-466
Main Authors: Hsieh, Chang-Hsun, Huang, Ying-Sheng, Ho, Ching-Hwa, Tiong, Kwong-Kau, Muñoz, Martin, Maksimov, Oleg, Tamargo, Maria C.
Format: Article
Language:English
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Summary:Authors characterized the temperature dependence of band-edge transitions of three (Zn0.38Cd0.62)1-xBexSe II-VI films with different Be concentrations x by using contactless electroreflectance (CER) and piezoreflectance (PzR) in the temperature range of 15 to 450 K. By a careful comparison of the relative intensity of PzR and CER spectra, the identification of light-hole (lh) and heavy-hole (hh) character of the excitonic transitions of the samples has been accomplished. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the energy (including thermal expansion effects) and broadening parameter of the band edge transitions of ZnCdBeSe. The study shows that Be incorporation can effectively reduce the rate of temperature variation of the energy gap. 34 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.459