A novel current-mode sensing scheme for magnetic tunnel junction MRAM

In this paper, we present two integrated circuits for sensing data nondestructively from one-transistor one-magnetic tunnel junction (1T-1MTJ) magnetoresistive random access memory (MRAM). The first one is a low-power sensing circuit for MTJs with a magnetoresistance (MR) ratio larger than 10%, and...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2004-03, Vol.40 (2), p.483-488
Main Authors: Au, E.K.S., Wing-Hung Ki, Wai Ho Mow, Hung, S.T., Wong, C.Y.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Gold
Magnetic circuits
Magnetic materials
Magnetic properties and materials
Magnetic switching
Magnetic tunneling
Magnetism
Operational amplifiers
Physics
Random access memory
Tunneling magnetoresistance
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Summary:In this paper, we present two integrated circuits for sensing data nondestructively from one-transistor one-magnetic tunnel junction (1T-1MTJ) magnetoresistive random access memory (MRAM). The first one is a low-power sensing circuit for MTJs with a magnetoresistance (MR) ratio larger than 10%, and the second one is a high-sensitivity switched-current sensing circuit for MTJs with an MR ratio as low as 5%. The circuits are designed using 0.60- and 0.18-/spl mu/m CMOS processes, and their performance is verified using HSPICE. Compared with existing sensing circuits at a power supply of 3.0 V, their read access time is 1.46-3.33 times faster and power consumption is 2.67-3.85 times smaller.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2004.824102