A novel current-mode sensing scheme for magnetic tunnel junction MRAM

In this paper, we present two integrated circuits for sensing data nondestructively from one-transistor one-magnetic tunnel junction (1T-1MTJ) magnetoresistive random access memory (MRAM). The first one is a low-power sensing circuit for MTJs with a magnetoresistance (MR) ratio larger than 10%, and...

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Published in:IEEE transactions on magnetics 2004-03, Vol.40 (2), p.483-488
Main Authors: Au, E.K.S., Wing-Hung Ki, Wai Ho Mow, Hung, S.T., Wong, C.Y.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Gold
Magnetic circuits
Magnetic materials
Magnetic properties and materials
Magnetic switching
Magnetic tunneling
Magnetism
Operational amplifiers
Physics
Random access memory
Tunneling magnetoresistance
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cited_by cdi_FETCH-LOGICAL-c349t-9d1c123b96b3c781070201424541c97495b7210ea6f310aa38cb0785265f3ddd3
cites cdi_FETCH-LOGICAL-c349t-9d1c123b96b3c781070201424541c97495b7210ea6f310aa38cb0785265f3ddd3
container_end_page 488
container_issue 2
container_start_page 483
container_title IEEE transactions on magnetics
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creator Au, E.K.S.
Wing-Hung Ki
Wai Ho Mow
Hung, S.T.
Wong, C.Y.
description In this paper, we present two integrated circuits for sensing data nondestructively from one-transistor one-magnetic tunnel junction (1T-1MTJ) magnetoresistive random access memory (MRAM). The first one is a low-power sensing circuit for MTJs with a magnetoresistance (MR) ratio larger than 10%, and the second one is a high-sensitivity switched-current sensing circuit for MTJs with an MR ratio as low as 5%. The circuits are designed using 0.60- and 0.18-/spl mu/m CMOS processes, and their performance is verified using HSPICE. Compared with existing sensing circuits at a power supply of 3.0 V, their read access time is 1.46-3.33 times faster and power consumption is 2.67-3.85 times smaller.
doi_str_mv 10.1109/TMAG.2004.824102
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subjects Anisotropic magnetoresistance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Gold
Magnetic circuits
Magnetic materials
Magnetic properties and materials
Magnetic switching
Magnetic tunneling
Magnetism
Operational amplifiers
Physics
Random access memory
Tunneling magnetoresistance
title A novel current-mode sensing scheme for magnetic tunnel junction MRAM
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