Anisotropic etching characteristics of platinum electrode for ferroelectric capacitor

The effect of etch parameters of platinum etching using Cl/sub 2//CO plasma on the etching properties and the etch profiles was investigated. The etching characteristics with respect to substrate temperature are different in two temperature regions below and above 210/spl deg/C and significantly dep...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1999-05, Vol.46 (5), p.984-992
Main Authors: Hong Kim, Jin, Ihl Woo, Seong, Yun Nam, Byung, Jong Yoo, Won
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Anisotropy
Capacitors
Carbon monoxide
Electrodes
Etching
Ferroelectric materials
Plasma applications
Plasma chemistry
Plasma properties
Plasma temperature
Platinum
Residues
Silicon dioxide
Sputter etching
X-ray photoelectron spectroscopy
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Summary:The effect of etch parameters of platinum etching using Cl/sub 2//CO plasma on the etching properties and the etch profiles was investigated. The etching characteristics with respect to substrate temperature are different in two temperature regions below and above 210/spl deg/C and significantly depended on Cl/sub 2/ concentration in each temperature region. The etch rates of Pt were enhanced suddenly at the substrate temperature of around 210/spl deg/C when Cl/sub 2/ concentration is 50-80%. The etch rates of Pt below 210/spl deg/C did not change much with increasing temperature. The selectivity of Pt over SiO/sub 2/ was governed by the etch rate of SiO/sub 2/ in the lower temperature region but determined by the etch rates of Pt in the higher temperature region. The anisotropy of etch profiles was high enough to achieve vertical pattern without etch residues in the lower temperature region for the application in fabricating 1-Gbit era. In the higher temperature region, however, the slopes of etch profiles due to the volatile products of Pt were found. XPS was used to analyze the surface atomic compositions after various etching treatments.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.760407