Twin suppression in HWE grown CdTe epilayers on Si(111) by novel two-step growth procedure

The crystal quality of CdTe(111)/Si(111) epilayers grown by hot wall epitaxy (HWE) is investigated by symmetric and asymmetric high resolution X-ray diffraction (HRXRD) to reveal the main reason for the improved crystallinity when applying originally designed two-step growth method. HRXRD data show...

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Bibliographic Details
Published in:Materials letters 2004-04, Vol.58 (10), p.1607-1610
Main Authors: Lalev, Georgi M., Wang, Jifeng, Abe, Seishi, Masumoto, Katashi, Isshiki, Minoru
Format: Article
Language:English
Subjects:
Epitaxial growth
Semiconductors
X-ray techniques
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Summary:The crystal quality of CdTe(111)/Si(111) epilayers grown by hot wall epitaxy (HWE) is investigated by symmetric and asymmetric high resolution X-ray diffraction (HRXRD) to reveal the main reason for the improved crystallinity when applying originally designed two-step growth method. HRXRD data show that the two-step growth method reduces twin content remarkably compared to the conventional one-step growth. The twin content in CdTe epilayer is extremely sensitive to the growth conditions, especially to the growth rate at the early stage of the crystal growth. The direct growth of high quality CdTe epilayer on Si(111) must be a promising substrate for fabricating high performance MCT infrared detectors.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2003.10.034