Inversion charge modeling

A simple, implicit, relation for the inversion charge density in the channel of metal oxide semiconductor (MOS) transistors is presented. The relation is continuous and covers the whole operating range, from subthreshold to strong inversion. The derivative of the local inversion charge density with...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-08, Vol.48 (8), p.1585-1593
Main Authors: Gummel, H.K., Singhal, K.
Format: Article
Language:English
Subjects:
Channels
Charge density
Derivatives
Drains
Inversions
Mathematical analysis
Metal oxide semiconductors
MOSFETs
Voltage
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Summary:A simple, implicit, relation for the inversion charge density in the channel of metal oxide semiconductor (MOS) transistors is presented. The relation is continuous and covers the whole operating range, from subthreshold to strong inversion. The derivative of the local inversion charge density with respect to the channel voltage is a simple expression in the charge density, leading to analytic integrals as required for obtaining the drain current and the capacitance coefficients.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.936564