Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires

We demonstrate the epitaxial coating of GaN NWs with an epitaxial ZnO shell by atomic layer deposition at 300 °C. Scanning transmission electron microscopy proves a sharp and defect-free coherent interface. The strain in the core–shell structure due to the lattice mismatch and different thermal expa...

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Bibliographic Details
Published in:Nano letters 2023-08, Vol.23 (15), p.6920-6926
Main Authors: Kolhep, Maximilian, Pantle, Florian, Karlinger, Monika, Wang, Di, Scherer, Torsten, Kübel, Christian, Stutzmann, Martin, Zacharias, Margit
Format: Article
Language:English
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Summary:We demonstrate the epitaxial coating of GaN NWs with an epitaxial ZnO shell by atomic layer deposition at 300 °C. Scanning transmission electron microscopy proves a sharp and defect-free coherent interface. The strain in the core–shell structure due to the lattice mismatch and different thermal expansion coefficients of GaN and ZnO was analyzed using 4D-STEM strain mapping and Raman spectroscopy and compared to theoretical calculations. The results highlight the outstanding advantages of epitaxial shell growth using atomic layer deposition, e.g., conformal coating and precise thickness control.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c01531