A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f/sub T/ of 7 GHz.

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Bibliographic Details
Published in:IEEE electron device letters 2000-12, Vol.21 (12), p.578-580
Main Authors: Henning, J.P., Przadka, A., Melloch, M.R., Cooper, J.A.
Format: Article
Language:English
Subjects:
Annealing
Capacitance
Electron beams
Etching
Fabrication
Microwave devices
Microwave transistors
Nickel
Ohmic contacts
Silicon carbide
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Description
Summary:A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f/sub T/ of 7 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.887471