Fabrication of ZnO thin film diode using laser annealing

A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of...

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Bibliographic Details
Published in:Thin solid films 2005-02, Vol.473 (1), p.31-34
Main Authors: Lee, Sang Yeol, Shim, Eun Sub, Kang, Hong Seong, Pang, Seong Sik, Kang, Jeong Seok
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser annealing
Lasers
Light-emitting diode
Optics
Optoelectronic devices
Physics
PLD
P–n junction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
ZnO
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Summary:A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.06.194