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Fabrication of ZnO thin film diode using laser annealing
A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of...
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| Published in: | Thin solid films 2005-02, Vol.473 (1), p.31-34 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c356t-c211aab4a7d365fb24c73963a99c38d7729edb352c72a8b82a7017813bd90ce23 |
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| cites | cdi_FETCH-LOGICAL-c356t-c211aab4a7d365fb24c73963a99c38d7729edb352c72a8b82a7017813bd90ce23 |
| container_end_page | 34 |
| container_issue | 1 |
| container_start_page | 31 |
| container_title | Thin solid films |
| container_volume | 473 |
| creator | Lee, Sang Yeol Shim, Eun Sub Kang, Hong Seong Pang, Seong Sik Kang, Jeong Seok |
| description | A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode. |
| doi_str_mv | 10.1016/j.tsf.2004.06.194 |
| format | article |
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The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2004.06.194</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Laser annealing ; Lasers ; Light-emitting diode ; Optics ; Optoelectronic devices ; Physics ; PLD ; P–n junction ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor lasers; laser diodes ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; ZnO</subject><ispartof>Thin solid films, 2005-02, Vol.473 (1), p.31-34</ispartof><rights>2004 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-c211aab4a7d365fb24c73963a99c38d7729edb352c72a8b82a7017813bd90ce23</citedby><cites>FETCH-LOGICAL-c356t-c211aab4a7d365fb24c73963a99c38d7729edb352c72a8b82a7017813bd90ce23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17139782$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Sang Yeol</creatorcontrib><creatorcontrib>Shim, Eun Sub</creatorcontrib><creatorcontrib>Kang, Hong Seong</creatorcontrib><creatorcontrib>Pang, Seong Sik</creatorcontrib><creatorcontrib>Kang, Jeong Seok</creatorcontrib><title>Fabrication of ZnO thin film diode using laser annealing</title><title>Thin solid films</title><description>A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Laser annealing</subject><subject>Lasers</subject><subject>Light-emitting diode</subject><subject>Optics</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>PLD</subject><subject>P–n junction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>ZnO</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wFsuets1H9t84EmKVaHQi168hNl8aMo2W5Ot4L93SwvePA3DvO87Mw9C15TUlFBxt66HEmpGSFMTUVPdnKAJVVJXTHJ6iibjgFSCaHKOLkpZE0IoY3yC1ALaHC0MsU-4D_g9rfDwGRMOsdtgF3vn8a7E9IE7KD5jSMlDN_aX6CxAV_zVsU7R2-Lxdf5cLVdPL_OHZWX5TAyVZZQCtA1Ix8UstKyxkmvBQWvLlZOSae9aPmNWMlCtYiAJlYry1mliPeNTdHvI3eb-a-fLYDaxWN91kHy_K4apRitB1SikB6HNfSnZB7PNcQP5x1Bi9ozM2oyMzJ6RIcKMjEbPzTEcioUuZEg2lj-jpFxLtT_i_qDz46ff0WdTbPTJehezt4Nxffxnyy--oHrB</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Lee, Sang Yeol</creator><creator>Shim, Eun Sub</creator><creator>Kang, Hong Seong</creator><creator>Pang, Seong Sik</creator><creator>Kang, Jeong Seok</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050201</creationdate><title>Fabrication of ZnO thin film diode using laser annealing</title><author>Lee, Sang Yeol ; Shim, Eun Sub ; Kang, Hong Seong ; Pang, Seong Sik ; Kang, Jeong Seok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-c211aab4a7d365fb24c73963a99c38d7729edb352c72a8b82a7017813bd90ce23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Laser annealing</topic><topic>Lasers</topic><topic>Light-emitting diode</topic><topic>Optics</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>PLD</topic><topic>P–n junction</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sang Yeol</creatorcontrib><creatorcontrib>Shim, Eun Sub</creatorcontrib><creatorcontrib>Kang, Hong Seong</creatorcontrib><creatorcontrib>Pang, Seong Sik</creatorcontrib><creatorcontrib>Kang, Jeong Seok</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sang Yeol</au><au>Shim, Eun Sub</au><au>Kang, Hong Seong</au><au>Pang, Seong Sik</au><au>Kang, Jeong Seok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of ZnO thin film diode using laser annealing</atitle><jtitle>Thin solid films</jtitle><date>2005-02-01</date><risdate>2005</risdate><volume>473</volume><issue>1</issue><spage>31</spage><epage>34</epage><pages>31-34</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>A p–n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I–V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2004.06.194</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 2005-02, Vol.473 (1), p.31-34 |
| issn | 0040-6090 1879-2731 |
| language | eng |
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| source | ScienceDirect Journals |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser annealing Lasers Light-emitting diode Optics Optoelectronic devices Physics PLD P–n junction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers laser diodes Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) ZnO |
| title | Fabrication of ZnO thin film diode using laser annealing |
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