A new self-aligned offset staggered polysilicon thin-film transistor

A new self-aligned offset staggered polysilicon thin-film transistor (poly-Si TFT) has been proposed and demonstrated to have a suppressed leakage current. For the self-aligned offset structure, planarization with thick photoresist and etchback of photoresist are successfully utilized. The offset le...

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Bibliographic Details
Published in:IEEE electron device letters 1999-08, Vol.20 (8), p.381-383
Main Authors: Hah, Jung-in, Yang, Gi-Young, Han, Chul-Hi
Format: Article
Language:English
Subjects:
Active matrix liquid crystal displays
Etching
Fabrication
Leakage current
Planarization
Plasma applications
Plasma sources
Resists
Thickness control
Thin film transistors
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Summary:A new self-aligned offset staggered polysilicon thin-film transistor (poly-Si TFT) has been proposed and demonstrated to have a suppressed leakage current. For the self-aligned offset structure, planarization with thick photoresist and etchback of photoresist are successfully utilized. The offset length can be easily controlled by the thickness of the gate material without photolithographic limitation. In the self-aligned offset polysilicon TFT's, the leakage current decreases with an increasing offset length.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.778147