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Effects of seeding methods on the fabrication of microcrystalline silicon solar cells using radio frequency plasma enhanced chemical vapor deposition

Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding proc...

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Bibliographic Details
Published in:Thin solid films 2005-07, Vol.483 (1), p.84-88
Main Authors: Li, Yuan-Min, Li, Liwei, Selvan, J.A. Anna, Delahoy, Alan E., Levy, Roland A.
Format: Article
Language:English
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Summary:Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of μc-Si:H i-layers. It has been demonstrated that p-layer seeding methods are preferable to i-layer seeding. While performance of μc-Si:H solar cells produced by i-layer seeding methods was usually limited by very low fill factors, μc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by p-layer seeding.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.12.029