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Effects of seeding methods on the fabrication of microcrystalline silicon solar cells using radio frequency plasma enhanced chemical vapor deposition
Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding proc...
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Published in: | Thin solid films 2005-07, Vol.483 (1), p.84-88 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Single junction
p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H
i-layers and performance of μc-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of μc-Si:H
i-layers. It has been demonstrated that
p-layer seeding methods are preferable to
i-layer seeding. While performance of μc-Si:H solar cells produced by
i-layer seeding methods was usually limited by very low fill factors, μc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by
p-layer seeding. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2004.12.029 |