Coarsening of nano-crystalline SiC in amorphous Si–B–C–N

The formation of nano-crystalline SiC is studied in various amorphous precursor derived Si–B–C–N bulk ceramics at temperatures between 1600 and 1800 °C. The formation process of SiC can be described by a very rapid crystallization (

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Bibliographic Details
Published in:Journal of the European Ceramic Society 2005, Vol.25 (2), p.227-231
Main Authors: Schmidt, H., Gruber, W., Borchardt, G., Gerstel, P., Müller, A., Bunjes, N.
Format: Article
Language:English
Subjects:
Ammonolysis
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Metastable material
Structural ceramics
Technical ceramics
Thermolysis
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Description
Summary:The formation of nano-crystalline SiC is studied in various amorphous precursor derived Si–B–C–N bulk ceramics at temperatures between 1600 and 1800 °C. The formation process of SiC can be described by a very rapid crystallization (
ISSN:0955-2219
1873-619X
DOI:10.1016/j.jeurceramsoc.2004.08.004