Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition

• Published in: Thin solid films 2005-10, Vol.489 (1-2), p.1-4
• Main Authors: JEON, M. K, CHUNG, H. J, KIM, K. W, OH, K. S, WOO, S. I
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Fatigue, brittleness, fracture, and cracks; Ferroelectricity and antiferroelectricity; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.03.051

Cerium-substituted bismuth titanate (Bi3DDT25Ce0DDT75Ti3O12 (BCT)) films were deposited on the Pt(111)/SiO2/Si(100) substrates by a liquid source misted chemical deposition technique. This film showed X-ray diffraction patterns that crystallization along the (006) direction was suppressed and did not contain any other oxides. The remnant polarization of this film increased with increase in annealing temperature. The 2Pr and 2Ec values of the BCT film annealed at 700 DDGC were 19DDT72 D*mC/cm2and 357 kV/cm, respectively. 2Pr value of this film decreased by less than 5% of the initial value after 7x109read/write switching cycles at a frequency of 1 MHz.