New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET's) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron...

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Bibliographic Details
Published in:IEEE electron device letters 1986-02, Vol.7 (2), p.78-80
Main Authors: Shur, M.S., Arch, D.K., Daniels, R.R., Abrokwah, J.K.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electron emission
Electronics
Exact sciences and technology
FETs
Frequency
Gallium arsenide
Insulation
Parasitic capacitance
Resistance heating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
Voltage
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Description
Summary:We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET's) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron gas. This mechanism is similar to that causing the negative differential resistance in NERFET's. However, much smaller parasitic capacitance in HIGFET's may allow us to reach higher frequencies of operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26300