PLD growth of stoichiometric Fe(3)O(4) thin films for spin tunneling devices

Epitaxial thin films of Fe(3-delta)O(4) were prepared on (100) MgO substrates by pulsed laser deposition. These films had a smooth surface on an atomic scale along with extremely high crystalline quality. It was found from the resistivity and XPS measurements that thin films of nearly stoichiometric...

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Published in:IEEE transactions on magnetics 1999-09, Vol.35 (5), p.3046-3048
Main Authors: Kiyomura, T, Gomi, M, Maruo, Y, Toyoshima, H
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creator Kiyomura, T
Gomi, M
Maruo, Y
Toyoshima, H
description Epitaxial thin films of Fe(3-delta)O(4) were prepared on (100) MgO substrates by pulsed laser deposition. These films had a smooth surface on an atomic scale along with extremely high crystalline quality. It was found from the resistivity and XPS measurements that thin films of nearly stoichiometric Fe(3)O (4) are obtained at 300 deg C in oxygen pressure of 1x10 (-6) Torr and the conditions for growing the stoichiometric Fe (3)O(4) thin film lie in a narrow range. In addition, it was indicated that low temperature deposition below 200 deg C is required for the insulating oxide layer onto the Fe(3)O(4 ) layer in the fabrication process of the tunneling junctions even at oxygen pressure as small as 1x10(-5) Torr
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title PLD growth of stoichiometric Fe(3)O(4) thin films for spin tunneling devices
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