A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy

The authors propose and demonstrate a delta -strained multiple-quantum-well laser in which the quantum well is composed of a thin strained layer ( approximately AA In/sub x/Ga/sub 1-x/As) sandwiched by lattice-matched (In/sub 0.53/Ga/sub 0.47/As) layers. A threshold current density of 510 A/cm/sup 2...

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Bibliographic Details
Published in:IEEE photonics technology letters 1991-05, Vol.3 (5), p.430-432
Main Authors: Yang, L., Wu, M.C., Chen, Y.K., Tsang, W.T., Chu, S.N.G., Sergent, A.M.
Format: Article
Language:English
Subjects:
Capacitive sensors
Chemical lasers
Epitaxial growth
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Power generation
Quantum well devices
Quantum well lasers
Threshold current
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Summary:The authors propose and demonstrate a delta -strained multiple-quantum-well laser in which the quantum well is composed of a thin strained layer ( approximately AA In/sub x/Ga/sub 1-x/As) sandwiched by lattice-matched (In/sub 0.53/Ga/sub 0.47/As) layers. A threshold current density of 510 A/cm/sup 2 /was obtained from broad-area lasers with four delta -strained quantum wells and a cavity length of 3 mm, with an emission wavelength near 1.55 mu m. The use of a delta -strained quantum well provides an additional degree of freedom in optimizing the amount of strain and thickness of the active layer in improving the device performance.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.93868