Plasma-assisted InP-to-Si low temperature wafer bonding

The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based optoelectronic devices on Si. From there, the lowering of annealing temperature in wafer bonding by plasma-assisted bonding is the essence o...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2002-01, Vol.8 (1), p.118-131
Main Authors: Pasquariello, D., Hjort, K.
Format: Article
Language:English
Subjects:
Annealing
Bonding
Dissimilar materials
Lattices
Optical materials
Optoelectronic devices
Plasma applications
Plasma devices
Plasma materials processing
Plasma properties
Plasma temperature
Quantum electronics
Semiconductor materials
Silicon
Wafer bonding
Wafers
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Summary:The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based optoelectronic devices on Si. From there, the lowering of annealing temperature in wafer bonding by plasma-assisted bonding is the essence of this review paper. Lower annealing temperatures would further launch wafer bonding as a competitive technology and enable a wider use of it. Oxygen plasma treatment has been proven to be very feasible in achieving a strong bonding already at low temperatures. It was also seen that in our experimental setups the results depended on what plasma parameters that were used, since different plasma parameters create different surface conditions.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.991407