Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching

Micromachining arbitrary 3D silicon structures for micro-electromechanical systems can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we have investigated the use of deep reactive ion etching (DRIE) and the tailoring of etch selectivity for precise fa...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2005-03, Vol.119 (1), p.245-253
Main Authors: Waits, C.M., Morgan, B., Kastantin, M., Ghodssi, R.
Format: Article
Language:English
Subjects:
DRIE
Etch selectivity
Gray-scale lithography
MEMS
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Summary:Micromachining arbitrary 3D silicon structures for micro-electromechanical systems can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we have investigated the use of deep reactive ion etching (DRIE) and the tailoring of etch selectivity for precise fabrication. Silicon loading, the introduction of an O 2 step, wafer electrode power, and wafer temperature are evaluated and determined to be effective for coarsely controlling etch selectivity in DRIE. The non-uniformity and surface roughness characteristics are evaluated and found to be scaled by the etch selectivity when the 3D profile is transferred into the silicon. A micro-compressor is demonstrated using gray-scale lithography and DRIE showing that etch selectivity can be successfully tailored for a specific application.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2004.03.024