Probe station testing of large area silicon drift detectors

Probe stations for STAR Si drift detectors testing were developed and built at BNT and Ohio State University. A throughput of a wafer per day per probe station was reached. The testing procedure and probe station design criteria are discussed.

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2000-08, Vol.47 (4), p.1375-1380
Main Authors: Asmus, A., Bellwied, R., Beuttenmuller, R., Chen, W., Dyke, H., Eremin, V., Fiske, D.R., Hoffmann, G.W., Humanic, T.J., Grau, M., Ilyashenko, I., Kotov, I.V., Kraner, H.W., Leonhardt, B., Li, Z., Lynn, D., Pandey, S.U., Schambach, J., Sedlmeir, J., Sugarbaker, E., Takahashi, J.
Format: Article
Language:English
Subjects:
Anodes
Cathodes
Detectors
Electrodes
Electrons
Probes
Silicon
Strips
Testing
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Probe stations for STAR Si drift detectors testing were developed and built at BNT and Ohio State University. A throughput of a wafer per day per probe station was reached. The testing procedure and probe station design criteria are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.872981