Proton effects in charge-coupled devices

Basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage e...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1996-04, Vol.43 (2), p.614-627
Main Authors: Hopkinson, G.R., Dale, C.J., Marshall, P.W.
Format: Article
Language:English
Subjects:
Charge coupled devices
Dark current
Electron traps
Instruments
Laboratories
Proton effects
Radiation effects
Sensor arrays
Silicon
Solid state circuits
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Summary:Basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be seen; in the latter, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-induced displacement damage effects on dark current and charge transfer are considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.490905