New physical insights and models for high-voltage LDMOST IC CAD

The lateral DMOST (LDMOST), including an LDD (lightly doped drain) and the inherent BJT (bipolar junction transistor), is studied extensively using the two-dimensional device simulator PISCES. The PISCES simulations provide physical insights into the normal- and reverse-mode operations of the LDMOST...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-07, Vol.38 (7), p.1641-1649
Main Authors: Kim, Y.-S., Fossum, J.G., Williams, R.K.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit simulation
Design automation
Electronics
Equations
Exact sciences and technology
Hybrid integrated circuits
Integrated circuit modeling
Numerical simulation
Robustness
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
SPICE
Transistors
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Summary:The lateral DMOST (LDMOST), including an LDD (lightly doped drain) and the inherent BJT (bipolar junction transistor), is studied extensively using the two-dimensional device simulator PISCES. The PISCES simulations provide physical insights into the normal- and reverse-mode operations of the LDMOST, which are used for developing a comprehensive LDD LDMOST model for circuit simulation. In the modeling methodology, the LDD LDMOST is regionally partitioned into three main components (the channel, the drift region, and the BJT), and carrier-transport problems in each component are solved. The composite physical model is implemented in SPICE for HVIC (high-voltage integrated circuit) CAD and is supported by measurements. The modeling methodology is also applicable to the Resurf LDMOST.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.85161