Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX(TM ) substrates

Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1997-12, Vol.44 (6), p.2101-2105
Main Authors: Liu, S T, Allen, L P, Anc, M J, Jenkins, W C, Hughes, H L, Twigg, M E, Lawrence, R K
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates
ISSN:0018-9499
DOI:10.1109/23.659024