In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

The stoichiometry of SiOx layers in SiOx/SiO2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum...

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Bibliographic Details
Published in:Thin solid films 2005-05, Vol.478 (1-2), p.21-24
Main Authors: Kim, Kyung Joong, Moon, Dae Won, Hong, Seung-Hui, Choi, Suk-Ho, Yang, Moon-Seung, Jhe, Ji-Hong, Shin, Jung H.
Format: Article
Language:English
Subjects:
Multilayer
Nanostructure
Silicon oxide
X-ray photoelectron spectroscopy
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Summary:The stoichiometry of SiOx layers in SiOx/SiO2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiOx films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.09.044