Pseudo spin valve MRAM cells with sub-micrometer critical dimension

Pseudo spin valve cells with critical dimension 0.15 /spl mu/m were fabricated using e-beam lithography and exercised with an externally applied magnetic field. Data indicate that bit end shaping is important for cell stability. At such small critical dimensions, the field required to write a cell i...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on magnetics 1998-07, Vol.34 (4), p.1060-1062
Main Authors: Everitt, B.A., Pohm, A.V., Beech, R.S., Fink, A., Daughton, J.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Giant magnetoresistance
Lithography
Magnetic anisotropy
Magnetic devices
Magnetic domains
Magnetic materials
Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.)
domain-motion devices, etc
Magnetization
Magnetostatics
Perpendicular magnetic anisotropy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin valves
Switches
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Pseudo spin valve cells with critical dimension 0.15 /spl mu/m were fabricated using e-beam lithography and exercised with an externally applied magnetic field. Data indicate that bit end shaping is important for cell stability. At such small critical dimensions, the field required to write a cell is large, approximately 180 Oe for cells with 60 /spl Aring/ and 80 /spl Aring/ thick magnetic layers. A single-domain model was used to predict switching thresholds for various word field rise times. Results indicate that significant lowering of the write field thresholds may occur for rise times less than about 2 ns.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.706356