Role of E-E scattering in the enhancement of channel hot carrierdegradation of deep-submicron NMOSFETs at high V(GS) conditions

It has been reported in the literature that in deep-submicron nMOSFETs, the worst channel hot carrier (CHC) degradation is not near the peak substrate current (as predicted by the lucky electron model), but at the V(GS)=V(DS) bias condition. We propose a new CHC model based on an electron-electron s...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2001-06, Vol.1 (2), p.113-119
Main Authors: Rauch, S E, La Rosa, G, Guarin, F J
Format: Magazinearticle
Language:English
Online Access:Get full text
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Summary:It has been reported in the literature that in deep-submicron nMOSFETs, the worst channel hot carrier (CHC) degradation is not near the peak substrate current (as predicted by the lucky electron model), but at the V(GS)=V(DS) bias condition. We propose a new CHC model based on an electron-electron scattering-induced hot carrier (HC) mechanism, that explains the worsening of the HC damage at high VGs and agrees well with the HC lifetime measured over the moderate to high gate voltage range and a wide L(EFF) range. The predicted quadratic source current dependence of HC lifetime at mid V (GS)/V(DS), evolving into a cubic dependence at high V (GS)/V(DS), matches well the observed behavior
ISSN:1530-4388
DOI:10.1109/7298.956705