RF power silicon-on-glass VDMOSFETs

Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured f T /f max is 6/10 G...

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Bibliographic Details
Published in:IEEE electron device letters 2004-06, Vol.25 (6), p.424-426
Main Authors: Nenadovic, N., Cuoco, V., Theeuwen, S.J.C.H., Schellevis, H., Spierings, G., Griffo, A., Pelk, M., Nanver, L.K., Jos, R.F.F., Slotboom, J.W.
Format: Article
Language:English
Subjects:
Base stations
Breakdown
Compressing
Devices
Gain measurement
Gates
Length measurement
Linearity
MOSFETs
Noise levels
Power amplifiers
Power generation
Power measurement
Radio frequency
Radiofrequency amplifiers
Stations
Voltage
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Description
Summary:Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured f T /f max is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.829025