Silicon-dioxide waveguides with low birefringence

We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2003-07, Vol.39 (7), p.874-879
Main Authors: de Peralta, L.G., Bernussi, A.A., Temkin, H., Borhani, M.M., Doucette, D.E.
Format: Article
Language:English
Subjects:
Applied sciences
Arrayed waveguide gratings
Birefringence
Boron
Chemical vapor deposition
Circuit properties
Compressive properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Noise levels
Optical and optoelectronic circuits
Optical waveguides
Optical waveguides and couplers
Plasma chemistry
Plasma waves
Polarization
Quantum electronics
Silicon compounds
Tensile stress
Waveguides
Wavelengths
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Summary:We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive to tensile stress was observed at a boron concentration of 9.1%. Pedestal-type waveguides formed with the high-boron top cladding layer show low loss of 0.02 dB/cm. Arrayed waveguide grating devices with a polarization-dependent wavelength shift of 0.01 nm and excellent stability have been demonstrated.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2003.813194