On correlation of CdS and CdSe valence band parameters

In this paper, the authors present self-correlated analytical criteria for the components of effective mass tensor characterizing holes of three valence bands in wurtzite-structure crystals. These criteria were used to calculate all the effective mass components for CdS and CdSe. Detailed investigat...

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Bibliographic Details
Published in:Thin solid films 2005-06, Vol.480 (Complete), p.373-376
Main Authors: Horley, P.P., Gorley, V.V., Gorley, P.M., Gonzalez-Hernandez, J., Vorobiev, Yu. V.
Format: Article
Language:English
Subjects:
Anisotropy
CdS
CdSe
Effective mass
External strain
Matrix elements
Optical transitions
Wurtzite-structure materials
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Summary:In this paper, the authors present self-correlated analytical criteria for the components of effective mass tensor characterizing holes of three valence bands in wurtzite-structure crystals. These criteria were used to calculate all the effective mass components for CdS and CdSe. Detailed investigations revealing the influence of uniaxial strain on carrier effective masses and matrix elements describing interband transitions between the valence subbands and conductive band were carried out. It was shown that the carriers with transversal effective masses belonging to B-valence subband behave similar to the carriers with parallel effective masses of C-valence band and vise versa in both CdS and CdSe. The results obtained could be successfully used to improve the interpretation of experimental data on transport, optical, and luminescence phenomena in the materials investigated.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.11.096