Sputtered Co-Cr films: effect of substrate bias voltage on Cr concentration

Co-Cr films were prepared by RF diode sputtering on sputter-etched substrates. Varying the bias voltage V/sub b/ from 0-300 V, the saturation magnetization M/sub s/ decreases drastically with increasingV/sub b/. In the range of low V/sub b/ values this effect can be explained by homogenization of th...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1988-03, Vol.24 (2), p.1886-1888
Main Authors: Werner, A., Hibst, H., Hadicke, E., Kronenbitter, J.
Format: Article
Language:English
Subjects:
Chromium
Diodes
Grain boundaries
Magnetic materials
Perpendicular magnetic recording
Saturation magnetization
Sputter etching
Sputtering
Substrates
Voltage
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Summary:Co-Cr films were prepared by RF diode sputtering on sputter-etched substrates. Varying the bias voltage V/sub b/ from 0-300 V, the saturation magnetization M/sub s/ decreases drastically with increasingV/sub b/. In the range of low V/sub b/ values this effect can be explained by homogenization of the Cr distribution. For V/sub b/ larger than -100 V, the further reduction of M/sub s/ is a consequence of the increasing Cr concentration in the Co-Cr film from 21 at.% (V/sub b/=-100 V) up to 27 at.% (V/sub b/-300 V).< >
ISSN:0018-9464
1941-0069
DOI:10.1109/20.11635