Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance

For pt.I, see ibid., vol.39, no.10, p.2268-77 (1992). The noise performance, important for the use of p-channel transistors on high-resistivity silicon in analog applications, is investigated. This is done for the two operation modes: bulk ( mod V/sub gs/ mod < mod V/sub T/ mod ) and surface ( mo...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-10, Vol.39 (10), p.2278-2283
Main Authors: Vanstraelen, G., Simoen, E., Claeys, C., Declerck, G.J.
Format: Article
Language:English
Subjects:
1f noise
Applied sciences
Circuit noise
Current-voltage characteristics
Electronics
Exact sciences and technology
Frequency
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal to noise ratio
Silicon
Superconducting device noise
Transconductance
Transistors
Voltage
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Summary:For pt.I, see ibid., vol.39, no.10, p.2268-77 (1992). The noise performance, important for the use of p-channel transistors on high-resistivity silicon in analog applications, is investigated. This is done for the two operation modes: bulk ( mod V/sub gs/ mod < mod V/sub T/ mod ) and surface ( mod V/sub gs/ mod > mod V/sub T/ mod ). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies of up to approximately=100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.158799