Optimization of potential profiles in junction charge-coupled devices

• Published in: IEEE transactions on electron devices 1981-07, Vol.28 (7), p.811-817
• Main Author: Wolsheimer, E.A.
• Format: Article
• Language: English
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1981.20436

Experimental results have shown that the junction charge-coupled device (JCCD) can compete with other types of CCD's in several applications, providing the channel potential can be made sufficiently smooth. Although devices have been fabricated with a charge-transfer intefficiency of 2 × 10 -s , the reproducibility was not satisfactory. Two new processes are described for fabricating JCCD's. By solving the two-dimensional Poisson equation numerically the parameters for the two processes are optimized. Computations for solving the lateral confinement problem of the JCCD have been made. A noncritical methtod is described to define the lateral boundaries of the channel. By simulating complete JCCD cells the influence of gate voltages and charge carriers in the channel was investigated. MOS effects caused by the aluminum interconnection layer on top of the devices also have been taken into account. The accuracy of the simulation method is demonstrated by comparing the results with both a one-dimensional simulation and another two-dimensional simulation which requires more computational effort. Based on the results of the computations JCCD's will be fabricated. Experiments will be carded out in order to verify the anticipated properties.