Radiation response of CMOS/SOI devices formed by wafer bond and etchback

The fabrication process and defect characteristics of thin-film silicon-on-insulator (SOI) devices prepared by the bond and etchback process (BESOI) utilizing diamond matching and noncontact polishing were studied. MOS devices were fabricated and were characterized electrically before and after radi...

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Published in:IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1653-1656
Main Authors: Palkuti, L.J., Ling, P., Leonov, P., Kawayoshi, H., Ormond, R., Yuan, J.
Format: Article
Language:English
Subjects:
CMOS process
Etching
Machining
Oxidation
Semiconductor films
Semiconductor thin films
Silicon on insulator technology
Substrates
Thickness control
Wafer bonding
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cited_by cdi_FETCH-LOGICAL-c336t-174e60e62238a9c2581996374b921c16369f6213f8b6dc4b51f6dfb5171604e43
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creator Palkuti, L.J.
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description The fabrication process and defect characteristics of thin-film silicon-on-insulator (SOI) devices prepared by the bond and etchback process (BESOI) utilizing diamond matching and noncontact polishing were studied. MOS devices were fabricated and were characterized electrically before and after radiation exposure. Analysis by TEM shows that a defect-free film is produced by the BESOI process. CMOS devices show high mobility and low leakage current (less than 1.0 pA/ mu m). The radiation responses of the top and edge oxide are comparable to those of bulk devices. Positive charge trapping and interface-trap generation were -0.8 and 0.8 V, respectively, at a dose of 10 Mrad (SiO/sub 2/).< >
doi_str_mv 10.1109/23.25515
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source IEEE Electronic Library (IEL) Journals
subjects CMOS process
Etching
Machining
Oxidation
Semiconductor films
Semiconductor thin films
Silicon on insulator technology
Substrates
Thickness control
Wafer bonding
title Radiation response of CMOS/SOI devices formed by wafer bond and etchback
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