IrSi Schottky-barrier infrared detectors with wavelength responsebeyond 12 mu m

Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted with low-energy boron ions. Low-energy boron ion implantation has been used to form a shallow p( )-Si layer that lowers the barrier height of IrSi-Si Schottky-barrier con...

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Bibliographic Details
Published in:IEEE electron device letters 1990-09, Vol.11 (9), p.415-417
Main Authors: Tsaur, B-Y, Chen, C K, Nechay, B A
Format: Article
Language:English
Online Access:Get full text
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Summary:Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted with low-energy boron ions. Low-energy boron ion implantation has been used to form a shallow p( )-Si layer that lowers the barrier height of IrSi-Si Schottky-barrier contacts by the image-force effect and field-assisted tunneling. IrSi infrared detectors with a cutoff wavelength beyond 12 mum have been obtained by this technique. The optical barrier height found by spectral response measurements is 0.100 eV, which corresponds to a detector cutoff wavelength of 12.4 mum
ISSN:0741-3106
DOI:10.1109/55.62974