Scaling issues related to high field phenomena in submicrometer MOSFET's

Both enhancement and depletion n-channel MOS devices with electrical channel lengths between 1 and 0.3 µm are characterized in terms of carrier heating effects. The effect of gate oxide thickness on the two-dimensional (2-D) electric field distribution has been analyzed through 2-D numerical device...

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Bibliographic Details
Published in:IEEE electron device letters 1986-02, Vol.7 (2), p.115-118
Main Authors: Sangiorgi, E., Hofstatter, E.A., Smith, R.K., Bechtold, P.F., Fichtner, W.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Current measurement
Electronics
Exact sciences and technology
MOS devices
MOSFET circuits
Resistance heating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Senior members
Temperature
Thickness measurement
Transistors
Two dimensional displays
Voltage
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Summary:Both enhancement and depletion n-channel MOS devices with electrical channel lengths between 1 and 0.3 µm are characterized in terms of carrier heating effects. The effect of gate oxide thickness on the two-dimensional (2-D) electric field distribution has been analyzed through 2-D numerical device simulation, and its impact on carrier heating process has been experimentally quantified. Our results allow some conclusions for reduced supply voltages (2 and 3 V for temperatures of 77 and 300 K, respectively) for future NMOS technologies with design rules of 0.75 µm.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26312