Radiation-hardened microelectronics for accelerators

Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor t...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-02, Vol.35 (1), p.160-165
Main Authors: Gover, J.E., Fischer, T.A.
Format: Article
Language:English
Subjects:
Acceleration
Atomic measurements
Charge carrier lifetime
Inductors
Ion accelerators
Ionization
Lattices
Microelectronics
Neutrons
Semiconductor materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.12697