Relationship between IBICC imaging and SEU in CMOS ICs

Ion-beam-induced charge-collection imaging (IBICC) has been used to study the single event upset (SEU) mechanisms of the Sandia TA670 16-kb static random-access memory (SRAM). Quantitative charge-collection spectra from known regions of the memory cell have been derived using this technique. For 2.4...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-12, Vol.40 (6), p.1787-1794
Main Authors: Sexton, F.W., Horn, K.M., Doyle, B.L., Laird, J.S., Cholewa, M., Saint, A., Legge, G.J.F.
Format: Article
Language:English
Subjects:
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Applied sciences
CHARGED PARTICLES
Circuit testing
Current measurement
DATA
ELECTRONIC CIRCUITS
Electronics
Exact sciences and technology
EXPERIMENTAL DATA
HELIUM IONS
Image analysis
INFORMATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Integrated circuit measurements
Integrated circuit modeling
INTEGRATED CIRCUITS
Integrated circuits by function (including memories and processors)
IONIZING RADIATIONS
IONS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
Random access memory
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal analysis
Single event upset
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Summary:Ion-beam-induced charge-collection imaging (IBICC) has been used to study the single event upset (SEU) mechanisms of the Sandia TA670 16-kb static random-access memory (SRAM). Quantitative charge-collection spectra from known regions of the memory cell have been derived using this technique. For 2.4-MeV He ions at normal incidence, charge collection depth for a reverse-biased p+ drain strike is estimated to be 4.8+or-0.4 mu m. Heavy-ion strikes to the reverse-biased p-well result in nearly complete collection of deposited charge to a depth of 5.5+or-0.5 mu m. A charge amplification effect in the n-on drain is identified and is due to either bipolar amplification or a shunt effect in the parasitic vertical npn bipolar transistor associated with the n+/n substrate, p-well, and n+drain. This effect is present only when the n+drain is at 0 V bias. When coupled with previous SEU-imaging, these results strongly suggest that the dominant SEU mechanism in this SRAM is a heavy-ion strike to the n-on transistor drain.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.273478